The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2006
Filed:
Mar. 13, 2003
Kazuhiro Sasada, Hashima, JP;
Mitsuru Okigawa, Nagoya, JP;
Makoto Izumi, Gifu, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A charge-coupled device capable of attaining excellent performance with a single-layer gate electrode structure is obtained. This charge-coupled device, having a single-layer gate electrode structure, comprises a gate insulator film formed on a semiconductor substrate, a plurality of partitions, consisting of an insulator, formed on the gate insulator film, and concave gate electrodes, arranged between adjacent ones of the partitions, having side surfaces formed along side portions of the partitions. Thus, when the partitions are formed with a width of not more than the minimum critical dimension of lithography, the interval between the adjacent gate electrodes is not more than the minimum critical dimension of lithography.