The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2006
Filed:
Apr. 12, 2004
Yoshikazu Tanabe, Iruma, JP;
Isamu Asano, Iruma, JP;
Makoto Yoshida, Ome, JP;
Naoki Yamamoto, Kawaguchi, JP;
Masayoshi Saito, Hachiouji, JP;
Nobuyoshi Natsuaki, Higashiyamato, JP;
Yoshikazu Tanabe, Iruma, JP;
Isamu Asano, Iruma, JP;
Makoto Yoshida, Ome, JP;
Naoki Yamamoto, Kawaguchi, JP;
Masayoshi Saito, Hachiouji, JP;
Nobuyoshi Natsuaki, Higashiyamato, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
With a view to preventing the oxidation of a metal film at the time of light oxidation treatment after gate patterning and at the same time to making it possible to control the reproducibility of oxide film formation and homogeneity of oxide film thickness at gate side-wall end portions, in a gate processing step using a poly-metal, a gate electrode is formed by patterning a gate electrode material which has been deposited over a semiconductor waferA having a gate oxide film formed thereon and has a poly-metal structure and then, the principal surface of the semiconductor waferA heated to a predetermined temperature or vicinity thereof is supplied with a hydrogen gas which contains water at a low concentration, the water having been formed from hydrogen and oxygen by a catalytic action, to selectively oxidize the principal surface of the semiconductor waferA, whereby the profile of the side-wall end portions of the gate electrode is improved.