The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2006
Filed:
Nov. 17, 2003
Shigeru Niki, Tsukuba, JP;
Paul Fons, Tsukuba, JP;
Kakuya Iwata, Tsukuba, JP;
Tetsuhiro Tanabe, Kyoto, JP;
Hidemi Takasu, Kyoto, JP;
Ken Nakahara, Kyoto, JP;
Shigeru Niki, Tsukuba, JP;
Paul Fons, Tsukuba, JP;
Kakuya Iwata, Tsukuba, JP;
Tetsuhiro Tanabe, Kyoto, JP;
Hidemi Takasu, Kyoto, JP;
Ken Nakahara, Kyoto, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
A light emitting device includes a silicon substrate (), a silicon nitride film () formed on the surface of the silicon substrate (), at least an n-type layer (), () and a p-type layer (), () which are formed on the silicon nitride film () and also which are made of a ZnO based compound semiconductor, and a semiconductor layer lamination () in which layers are laminated to form a light emitting layer. Preferably this silicon nitride film () is formed by thermal treatment conducted in an atmosphere containing nitrogen such as an ammonium gas. Also, in another embodiment, a light emitting device is formed by growing a ZnO based compound semiconductor layer on a main face of a sapphire substrate, the main face being perpendicular to the C-face thereof. As a result, it is possible to obtain a device using a ZnO based compound with high properties such as an LED very excellent in crystallinity and having a high light emitting efficiency.