The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2006

Filed:

Aug. 02, 2002
Applicant:

Shinji Toyoyama, Sakurai, JP;

Inventor:

Shinji Toyoyama, Sakurai, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a semiconductor integrated circuit device, a first control signal outputted from the power voltage evaluation circuit controls power voltage of the power voltage generation circuit so that the power voltage becomes lower within a range over which the internal circuit normally operates, while a second control signal outputted from the specified voltage detection circuit controls the power voltage of the power voltage generation circuit so that the power voltage generated by the power voltage generation circuit does not become equal to or higher than a specified voltage. This makes the power voltage as low as possible within the normally operational range of the internal circuit and suppresses increase of the gate current, so that unstable operations and current consumption increase of the MOS transistor can be prevented.


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