The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2006
Filed:
Nov. 14, 2002
Masahisa Sonoda, Yokkaichi, JP;
Tadashi Iguchi, Yokkaichi, JP;
Hiroaki Tsunoda, Yokkaichi, JP;
Eiji Sakagami, Yokkaichi, JP;
Masahisa Sonoda, Yokkaichi, JP;
Tadashi Iguchi, Yokkaichi, JP;
Hiroaki Tsunoda, Yokkaichi, JP;
Eiji Sakagami, Yokkaichi, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In a semiconductor device including a plurality of element regions and an element isolation region based on STI (shallow trench isolation) which electrically isolates the element regions from each other, each of the element regions includes; a channel region; source/drain regions formed to sandwich the channel region in a horizontal direction; a gate insulation film which is formed on the channel region and in which an angle of a bird's beak is 1 degree or smaller, the bird's beak being formed from a side of the element isolation region on a surface opposite a surface facing the channel region in a horizontal direction substantially perpendicular to the direction in which the source/drain region sandwich the channel region; and a gate electrode layer formed on the gate insulation film.