The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2006
Filed:
Jul. 16, 2003
K. R. Udayakumar, Dallas, TX (US);
Martin G. Albrecht, McKinney, TX (US);
Theodore S. Moise, Iv, Dallas, TX (US);
Scott R. Summerfelt, Garland, TX (US);
Sanjeev Aggarwal, Plano, TX (US);
Jeff L. Large, Dallas, TX (US);
K. R. Udayakumar, Dallas, TX (US);
Martin G. Albrecht, McKinney, TX (US);
Theodore S. Moise, IV, Dallas, TX (US);
Scott R. Summerfelt, Garland, TX (US);
Sanjeev Aggarwal, Plano, TX (US);
Jeff L. Large, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Semiconductor devices and fabrication methods are presented, in which a hydrogen barrier is provided above a ferroelectric capacitor to prevent degradation of the ferroelectric material during back-end manufacturing processes employing hydrogen. The hydrogen barrier comprises silicon rich silicon oxide or amorphous silicon, which can be used in combination with an aluminum oxide layer to inhibit diffusion of process-related hydrogen into the ferroelectric capacitor layer.