The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2006
Filed:
May. 25, 2005
Applicant:
Yasuo Okada, Kanagawa, JP;
Inventor:
Yasuo Okada, Kanagawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/80 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device comprising a buried insulating film formed in a substrate; a protective film formed on the buried insulating film covering corresponding diffusion regions of a P-type MISFET and a N-type MISFET, wherein the protective film is etch resistant to a hydrofluoric acid based solution; and a wiring layer formed on the protective film and being electrically connecting the diffusion regions of the P-type MISFET and the N-type MISFET.
Quick Actions:
Okada, Yasuo. (2006). Manufacturing method of semiconductor device and semiconductor device (U.S. Patent No. 6984855). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6984855
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