The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2006
Filed:
Feb. 26, 2004
Applicant:
Chul Hong Park, San Jose, CA (US);
Inventor:
Chul Hong Park, San Jose, CA (US);
Assignee:
Agilent Technologies, Inc, Palo Alto, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
Abstract
An integrated circuit (IC) with high electron mobility transistors, such as enhancement mode pseudomorphic high electron mobility transistors (E-pHEMTs) and method for fabricating the IC utilizes an increased gate-to-drain etch recess spacing in some of the high electron mobility transistors to provide on-chip electrostatic discharge protection. The use of the increased gate-to-drain etch recess spacing allows smaller high electron mobility transistors to be used for ancillary low speed applications on the IC, which reduces the chip area occupied by these ancillary transistors.