The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2006
Filed:
Jan. 30, 2002
Yuhzoh Tsuda, Tenri, JP;
Daisuke Hanaoka, Soraku-gun, JP;
Takayuki Yuasa, Ikoma-gun, JP;
Shigetoshi Ito, Ikoma, JP;
Mototaka Taneya, Nara, JP;
Yuhzoh Tsuda, Tenri, JP;
Daisuke Hanaoka, Soraku-gun, JP;
Takayuki Yuasa, Ikoma-gun, JP;
Shigetoshi Ito, Ikoma, JP;
Mototaka Taneya, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
The nitride semiconductor light emitting device includes a nitride semiconductor underlayer () grown on a surface of a nitride semiconductor substrate or a surface of a nitride semiconductor substrate layer laminated over a base substrate of other than a nitride semiconductor, and a light emitting device structure having a light emitting layer () including a quantum well layer or a quantum well layer and a barrier layer in contact with the quantum well layer between an n type layer () and a p type layer () over the nitride semiconductor underlayer. It includes a depression (D) not flattened on a surface of the light emitting device structure even after growth of the light emitting device structure.