The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2006
Filed:
May. 17, 2002
Sung-hoon Yang, Seoul, KR;
Glenn A. Cerny, Midland, MI (US);
Kyuha Chung, Seoul, KR;
Byung-keun Hwang, Midland, MI (US);
Wan-shick Hong, Seoul, KR;
Sung-Hoon Yang, Seoul, KR;
Glenn A. Cerny, Midland, MI (US);
Kyuha Chung, Seoul, KR;
Byung-Keun Hwang, Midland, MI (US);
Wan-Shick Hong, Seoul, KR;
Samsung Electronics, Co., Ltd., Suwon, KR;
Abstract
The present invention relates to a process for vapor depositing alow dielectric insulating film, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device.