The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2006

Filed:

Dec. 20, 2002
Applicants:

Jong Woo Son, San Jose, CA (US);

Chul Ha Chang, San Jose, CA (US);

Jung-jae Kim, San Jose, CA (US);

Koji Suzuki, Haguri-gun, JP;

Takashi Kuwahara, Ogaki, JP;

Inventors:

Jong Woo Son, San Jose, CA (US);

Chul Ha Chang, San Jose, CA (US);

Jung-Jae Kim, San Jose, CA (US);

Koji Suzuki, Haguri-gun, JP;

Takashi Kuwahara, Ogaki, JP;

Assignee:

cDream Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electron-emitting device including a protective layer that is formed on a catalyst layer to protect the catalyst layer from the deleterious environmental conditions before or during a cathode process. The present invention further includes a half etching process that is adapted to partially remove portions of the protective layer from the catalyst layer to etch the catalyst layer except carbon nano-tube growing portions. Portions of the protective layer still remain on the catalyst layer to protect the catalyst layer from the deleterious conditions from next cathode formation process.


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