The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2006
Filed:
Oct. 03, 2003
Applicants:
Dietmar Gogl, Essex Junction, VT (US);
John K. Debrosse, Colchester, VT (US);
Inventors:
Dietmar Gogl, Essex Junction, VT (US);
John K. DeBrosse, Colchester, VT (US);
Assignees:
Infineon Technologies AG, Munich, DE;
International Business Machines Corp., Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A magneto-resistive random access memory (MRAM) array comprises global bit lines segmented using a plurality of local bit lines. A read/write controller is connected to the switches. Switches couple the global bit line to the local bit lines. The MRAM array has low leakage currents and facilitates a high signal-to-noise (S/N) ratio of read and write operations.