The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2006
Filed:
Mar. 18, 2004
K. R. Udayakumar, Dallas, TX (US);
Theodore S. Moise, Dallas, TX (US);
Scott R. Summerfelt, Garland, TX (US);
K. R. Udayakumar, Dallas, TX (US);
Theodore S. Moise, Dallas, TX (US);
Scott R. Summerfelt, Garland, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Hydrogen barriers and fabrication methods are provided for protecting ferroelectric capacitors (C) from hydrogen diffusion in semiconductor devices (), wherein nitrided aluminum oxide (N—AlO) is formed over a ferroelectric capacitor (C), and one or more silicon nitride layers () are formed over the nitrided aluminum oxide (N—AlO). Hydrogen barriers are also provided in which an aluminum oxide (AlO, N—AlO) is formed over the ferroelectric capacitors (C), with two or more silicon nitride layers () formed over the aluminum oxide (AlO, N—AlO), wherein the second silicon nitride layer () comprises a low silicon-hydrogen SiN material.