The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2006
Filed:
Jan. 09, 2003
Bart J. Van Zeghbroeck, Boulder, CO (US);
John T. Torvik, Louisville, CO (US);
Bart J. Van Zeghbroeck, Boulder, CO (US);
John T. Torvik, Louisville, CO (US);
PowerSicel, Inc., Boulder, CO (US);
Abstract
Silicon carbide semiconductor devices having regrown layers and methods of fabricating the same in a self-aligned manner. According to one aspect of the invention, the method includes growing at least one layer of silicon carbide on a substrate, removing the device from a growth chamber to perform at least one processing step, and regrowing another layer of silicon carbide on the at least one layer. According to one embodiment of the invention, the regrown layer may be a heavily doped contact layer for the formation of low resistivity ohmic contacts.