The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2006
Filed:
Dec. 30, 2003
Applicants:
IN Gyun Jeon, Icheon-Si, KR;
Kwang Soo Kim, Icheon-Si, KR;
Jin Su Han, Icheon-Si, KR;
Inventors:
Assignee:
DongbuAnam Semiconductor Inc., Seoul, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A CMOS image sensor and a method for manufacturing the same, capable of preventing an interface between an active region and a field region in the CMOS image sensor from being damaged by ion implantation. The method comprises implanting dopant ions into a source region between a gate electrode of the reset transistor and the photodiode, using an ion implantation mask that covers predetermined locations of the field region and the source region.