The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2006
Filed:
Oct. 15, 2004
Chris Haidinyak, Santa Cruz, CA (US);
Chris Haidinyak, Santa Cruz, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
For determining optimum optical proximity corrections (OPCs) for a mask pattern, mask areas are formed on a reticle with each mask area having the mask pattern of polygons that are modified with respective OPCs perturbations. A respective patterned area is fabricated on a semiconductor wafer from each mask area of the reticle. A respective microscopy image of each respective patterned area is generated to determine a respective error function for each mask area by comparing a desired image of the mask pattern and the respective microscopy image. The optimum OPCs are determined as the respective OPCs perturbations corresponding to one of the mask areas having the respective error function that is a minimum of the mask areas.