The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6982042 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 03, 2006

Filed:

Feb. 28, 2003
Applicants:

Mark A. Church, Los Gatos, CA (US);

Wipul Pemsiri Jayasekara, San Jose, CA (US);

Howard Gordon Zolla, San Jose, CA (US);

Inventors:

Mark A. Church, Los Gatos, CA (US);

Wipul Pemsiri Jayasekara, San Jose, CA (US);

Howard Gordon Zolla, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 11/39 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for reducing noise in a lapping guide. Selected portions of a Giant magnetoresistive device wafer are masked, thereby defining masked and unmasked regions of the wafer in which the unmasked regions include lapping guides. The wafer is bombarded with ions such that a Giant magnetoresistive effect of the unmasked regions is reduced. The GMR device is lapped, using the lapping guides to measure an extent of the lapping


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Church, Mark. (2006). Ion bombardment of electrical lapping guides to decrease noise during lapping process (U.S. Patent No. 6982042). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6982042

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