The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2005
Filed:
Jul. 25, 2001
James a Davis, Richmond, VA (US);
Jonathan Jedwab, Bristol, GB;
Kenneth Graham Paterson, Teddington, GB;
Gadiel Seroussi, Cupertino, CA (US);
Kenneth K Smith, Boise, ID (US);
James A Davis, Richmond, VA (US);
Jonathan Jedwab, Bristol, GB;
Kenneth Graham Paterson, Teddington, GB;
Gadiel Seroussi, Cupertino, CA (US);
Kenneth K Smith, Boise, ID (US);
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Abstract
A magnetoresistive solid-state storage device (MRAM) performs error correction coding (ECC) of stored information. Since currently available MRAM devices are subject to physical failures, data storage arrangements are described to minimize the affect of those failures on the stored ECC encoded data, including storing all bits of each symbol in storage cellsin one row(FIG.), or in at least two rowsbut using storage cellsin the same columns(FIG.). Sets of bits taken from each roware allocated to different codewords(FIG.) and the order of allocation can be rotated (FIG.). A second level of error checking can be applied by adding a parity bitto each symbol(FIG.).