The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2005
Filed:
Nov. 06, 2002
Seung Cheol OH, San Jose, CA (US);
Seung Cheol Oh, San Jose, CA (US);
Nanoamp Solutions, Inc., Milpitas, CA (US);
Abstract
A self-refreshing SRAM with internal DRAM memory cells is provided with a test mode enable circuit for testing the real refresh time of the internal SRAM memory cells and for determining the maximum refresh capability of the internal DRAM memory cells. The self-refreshing DRAM includes a test-mode enable circuit, an arbitration circuit, and a memory control logic circuit. In a normal mode of operation, the test mode enable circuit is not active. In a test mode of operation, the test mode enable circuit is active which enables the memory control logic to be controlled by an external command signal that is provided through an external pin, such as a chip-enable /CE pin when the chip is in the test mode.