The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2005
Filed:
Oct. 28, 2002
Kamel Ounadjela, Belmont, CA (US);
Kamel Ounadjela, Belmont, CA (US);
Silicon Magnetic Systems, San Jose, CA (US);
Abstract
A memory cell includes a magnetic cell junction having an antiferromagnetic layer within a portion of the cell junction that is adapted to characterize a logic state of a bit written to the junction. More specifically, a memory cell includes, an antiferromagnetic layer arranged in contact with an adjacent magnetic layer within a storing portion of a magnetic cell junction. Such a magnetic cell junction configuration and a method for programming a memory cell with such a cell junction configuration may be used to improve the write selectivity of a memory cell array and reduce the amount of current needed to write a bit to a memory cell. Moreover, a memory cell includes a magnetic cell junction having an aspect ratio less than 1.6. In addition, a memory cell includes at least two resistors.