The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2005
Filed:
Oct. 24, 2002
Applicants:
Anand Seshadri, Plano, TX (US);
Terence G. Blake, Dallas, TX (US);
Jarrod R. Eliason, Colorado Springs, CO (US);
Inventors:
Anand Seshadri, Plano, TX (US);
Terence G. Blake, Dallas, TX (US);
Jarrod R. Eliason, Colorado Springs, CO (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C011/22 ; G11C014/00 ;
U.S. Cl.
CPC ...
Abstract
A SRAM cell wherein the pull up load of the cell is inherent ferroelectric leakage. The power down writeback may include boosting the word line. The power down writeback may also include discharging the plate from Vto ground. Furthermore, the plate is held high during read and write operations.