The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2005
Filed:
Aug. 23, 2002
Kouichi Takashima, Itami, JP;
Shin-ichi Yamagata, Itami, JP;
Yugaku Abe, Itami, JP;
Akira Sasame, Itami, JP;
Kouichi Takashima, Itami, JP;
Shin-ichi Yamagata, Itami, JP;
Yugaku Abe, Itami, JP;
Akira Sasame, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
In a semiconductor heat-dissipating substrate made of a Cu—W alloys whose pores have been infiltrated with copper, being a porous tungsten body whose pore diameter at a specific cumulative surface area of 95% is 0.3 μm or more, and whose pore diameter at a specific cumulative surface area of 5% is 30 μm or less, thermal conductivity of 210 W/m·K or more is obtained by decreasing the content of iron-family metal to be less than 0.02 weight %. Likewise, changing the amount of infiltrated copper in a molded object by utilizing a multi-shaft press to vary the amount of vesicles in the middle and peripheral portions makes for offering at low cost a semiconductor heat-dissipating substrate that in between middle and peripheral portions made of different materials does not have bonding matter.