The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2005
Filed:
Mar. 21, 2003
Applicants:
Tetsuji Moku, Asaka, JP;
Kohji Ohtsuka, Kawagoe, JP;
Masataka Yanagihara, Fujimi, JP;
Masaaki Kikuchi, Kofu, JP;
Inventors:
Tetsuji Moku, Asaka, JP;
Kohji Ohtsuka, Kawagoe, JP;
Masataka Yanagihara, Fujimi, JP;
Masaaki Kikuchi, Kofu, JP;
Assignee:
Sanken Electric Co., Ltd., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L033/00 ;
U.S. Cl.
CPC ...
Abstract
A low-resistance silicon baseplate () has formed thereon a buffer layerin the form of an alternating lamination of AlN sublayers () and GaN sublayers (). On this buffer layer there are formed an n-type semiconductor region () of gallium nitride, an active layer () of gallium indium nitride, and a p-type semiconductor region () of gallium nitride, in that order. An anode () is formed on the p-type semiconductor region (), and a cathode () on the baseplate ().