The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2005
Filed:
Nov. 15, 2002
Applicants:
Kwang-chul Joo, Ichon-shi, KR;
Jae-ok Kim, Ichon-shi, KR;
Inventors:
Kwang-Chul Joo, Ichon-shi, KR;
Jae-Ok Kim, Ichon-shi, KR;
Assignee:
Hynix Semiconductor Inc., Ichon-shi, KR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/31 ;
U.S. Cl.
CPC ...
Abstract
The present invention provides a method for forming an improved dielectric layer for semiconductor devices such as gate structures and capacitors. The method utilizes a layer of (TaO)(TiO)N (x defined herein) as a substitute for SiO, together with one or more additional procedures to minimize or prevent channel leakage and other problems that can minimize the performance of the structure.