The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2005

Filed:

Jan. 22, 2002
Applicants:

Kenneth P. Rodbell, Sandy Hook, CT (US);

Panayotis C. Andricacos, Croton-on-Hudson, NY (US);

Cyril Cabral, Jr., Ossining, NY (US);

Lynne M. Gignac, Beacon, NY (US);

Cyprian E. Uzoh, Milpitas, CA (US);

Peter S. Locke, Hopewell Junction, NY (US);

Inventors:

Kenneth P. Rodbell, Sandy Hook, CT (US);

Panayotis C. Andricacos, Croton-on-Hudson, NY (US);

Cyril Cabral, Jr., Ossining, NY (US);

Lynne M. Gignac, Beacon, NY (US);

Cyprian E. Uzoh, Milpitas, CA (US);

Peter S. Locke, Hopewell Junction, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C25D005/02 ;
U.S. Cl.
CPC ...
Abstract

A method for plating copper conductors on an electronic substrate and devices formed are disclosed. In the method, an electroplating copper bath that is filled with an electroplating solution kept at a temperature between about 0° C. and about 18° C. is first provided. A copper layer on the electronic substrate immersed in the electroplating solution is then plated either in a single step or in a dual-step deposition process. The dual-step deposition process is more suitable for depositing copper conductors in features that have large aspect ratios, such as a via hole in a dual damascene structure having an aspect ratio of diameter/depth of more than ⅓ or as high as 1/10. Various electroplating parameters are utilized to provide a short resistance transient in either the single step deposition or the dual-step deposition process. These parameters include the bath temperature, the bath agitation, the additive concentration in the plating bath, the plating current density utilized, the deposition rate of the copper film and the total thickness of the copper film deposited.


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