The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2005
Filed:
Mar. 18, 2004
Takeshi Watanabe, Yokohama, JP;
Kazunari Ishimaru, Yokohama, JP;
Takeshi Watanabe, Yokohama, JP;
Kazunari Ishimaru, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor memory is formed of first, second, third, fourth, fifth and sixth field effect transistors. The first and second transistors have a first line as gates, one ends of current paths of the first and second transistors are connected to a reference potential electrode. The third and fourth transistors have a second line as gates, and one ends of current paths of the third and fourth transistors are connected to the reference electrode. The fifth transistor has a first word line as a gate, and one end of a current path of the fifth transistor is connected to the other ends of the current paths of the first and second transistors. The sixth transistor having a second word line as a gate, and one end of a current path of the sixth transistor is connected to the other ends of the current paths of the third and fourth transistors.