The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2005
Filed:
Apr. 26, 2002
Toru Kurabayashi, Tokyo, JP;
Toru Oizumi, Tokyo, JP;
Kyouzou Kanamoto, Tokyo, JP;
Jun-ichi Nishizawa, Tokyo, JP;
Toru Kurabayashi, Tokyo, JP;
Toru Oizumi, Tokyo, JP;
Kyouzou Kanamoto, Tokyo, JP;
Jun-ichi Nishizawa, Tokyo, JP;
Abstract
The ultra high-speed vertical short channel insulated-gate static induction transistor with uniform operating characteristic which has the drain layerconsisting of an epitaxial single crystal layer on the main surfaceof substrate, the channel layerwith thickness 1000 Å or less on the drain layer, the source layerconsisting of an epitaxial single crystal layer on the channel layer, and the insulated-gatesandon the sidewalls of the drain, the channel, and the source layers. Since the thickness of 1000 Å or less is accurately controlled using the molecular layer epitaxial method and the channel layeris grown up, the X-ray photolithography is not needed. Since the gate oxide film is formed by low temperature CVD using active oxygen, impurity re-distribution does not occur.