The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2005

Filed:

Jan. 08, 2004
Applicants:

Richard Lee Ammlung, Sykesville, MD (US);

David Jerome Mountain, Baltimore, MD (US);

Inventors:

Richard Lee Ammlung, Sykesville, MD (US);

David Jerome Mountain, Baltimore, MD (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/44 ;
U.S. Cl.
CPC ...
Abstract

The present invention is a method of fabricating a semiconductor device using a fully cured BCB layer and removing the same using wet etching. The first step is selecting a substrate. The second step of the method is producing an oxide layer or other coating on the substrate. The third step is applying a BCB layer on the oxide layer. The fourth step is fully curing the BCB layer. The fifth step is processing the device. The sixth step is stressing the substrate, preferably causing the substrate to warp. The seventh step is wet etching the BCB layer. The eighth step is removing the BCB layer. The ninth step is removing the oxide layer.


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