The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2005
Filed:
Jun. 08, 2004
Meng-hung Chen, Taoyuan, TW;
Chia-sheng Yu, Banciao, TW;
Meng-Hung Chen, Taoyuan, TW;
Chia-Sheng Yu, Banciao, TW;
NANYA Technology Corporation, Taoyuan, TW;
Abstract
Disclosed is a method for forming a bit line contact hole/contact structure. The method of the present invention includes steps of providing a substrate; forming a plurality of word line structures on the substrate; forming a doped dielectric layer on the substrate having the word line structures formed thereon; defining a position for forming a bit line contact hole; removing the doped dielectric layer other than the portion at the position for forming the bit line contact hole; forming a non-doped dielectric layer on the substrate having the word line structures and residual doped dielectric layer formed thereon; removing the residual doped dielectric layer by using an etchant with a high selectivity for doped dielectric layer/non-doped dielectric layer to form a bit line contact hole; and filling the bit line contact hole with conductive material to form a bit line contact structure.