The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2005
Filed:
Aug. 18, 2003
Darius L. Crenshaw, Allen, TX (US);
Stuart M. Jacobsen, Frisco, TX (US);
David J. Seymour, Plano, TX (US);
Darius L. Crenshaw, Allen, TX (US);
Stuart M. Jacobsen, Frisco, TX (US);
David J. Seymour, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides a method and product-by-method of integrating a bias resistor in circuit with a bottom electrode of a micro-electromechanical switch on a silicon substrate. The resistor and bottom electrode are formed simultaneously by first sequentially depositing a layer of a resistor material (), a hard mask material () and a metal material () on a silicon substrate forming a stack. The bottom electrode and resistor lengths are subsequently patterned and etched () followed by a second etching () process to remove the hard mask and metal materials from the defined resistor length. Finally, in a preferred embodiment, the bottom electrode and resistor structure is encapsulated with a layer of dielectric which is patterned and etched () to correspond to the defined bottom electrode and resistor.