The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2005
Filed:
Feb. 26, 2002
Takuro Sekiya, Kanagawa, JP;
Akira Sakurai, Kanagawa, JP;
Masayoshi Katoh, Kanagawa, JP;
Teruyuki Furuta, Kanagawa, JP;
Kazuya Miyagaki, Kanagawa, JP;
Ken Kanai, Tokyo, JP;
Atsuyuki Watada, Mishima, JP;
Shunichi Sato, Watari-gun, JP;
Koei Suzuki, Sendai, JP;
Satoru Sugawara, Sendai, JP;
Shinji Satoh, Yokohama, JP;
Shuuichi Hikichi, Shibata-gun, JP;
Naoto Jikutani, Yokohama, JP;
Takashi Takahashi, Sendai, JP;
Akihiro Itoh, Watari-gun, JP;
Takuro Sekiya, Kanagawa, JP;
Akira Sakurai, Kanagawa, JP;
Masayoshi Katoh, Kanagawa, JP;
Teruyuki Furuta, Kanagawa, JP;
Kazuya Miyagaki, Kanagawa, JP;
Ken Kanai, Tokyo, JP;
Atsuyuki Watada, Mishima, JP;
Shunichi Sato, Watari-gun, JP;
Koei Suzuki, Sendai, JP;
Satoru Sugawara, Sendai, JP;
Shinji Satoh, Yokohama, JP;
Shuuichi Hikichi, Shibata-gun, JP;
Naoto Jikutani, Yokohama, JP;
Takashi Takahashi, Sendai, JP;
Akihiro Itoh, Watari-gun, JP;
Ricoh Company, Ltd., Tokyo, JP;
Abstract
A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.