The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2005
Filed:
Mar. 31, 2005
Takako Murosawa, Chuo-ku, JP;
Mari Miyauchi, Chuo-ku, JP;
Kazunori Noguchi, Chuo-ku, JP;
Akira Sato, Chuo-ku, JP;
Takako Murosawa, Chuo-ku, JP;
Mari Miyauchi, Chuo-ku, JP;
Kazunori Noguchi, Chuo-ku, JP;
Akira Sato, Chuo-ku, JP;
TDK Corporation, Tokyo, JP;
Abstract
A multilayer ceramic capacitor including an internal electrode layer, an internal dielectric layer having a thickness of less than 2 μm, and an external dielectric layer is provided, wherein the internal dielectric layer and external dielectric layer contain a plurality of dielectric particles, and when assuming that an average particle diameter of the entire dielectric particles in the internal dielectric layer is D50a (unit: μm), an average particle diameter of the entire dielectric particles existing at a position being away at least by 5 μm from the outermost internal electrode layer in the thickness direction is D50b (unit: μm), a ratio (D50a/D50b) of the D50a and D50b is y (no unit), standard deviation of a particle size distribution of the entire dielectric particles in the internal dielectric layer is σ (no unit), and a ratio that dielectric particles (coarse particles) having an average particle diameter of 2.25 times of the D50a exist in the entire dielectric particles is p (unit: %), the y and x satisfy a relationship of y<−0.75x+2.015 and y>−0.75x+1.740, the σ satisfies σ<0.091 and the p satisfies p<2.85%; by which a TC bias characteristic can be expected to be improved while maintaining various electric characteristics, particularly a sufficient permittivity, even when the internal dielectric layer is made thin.