The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2005
Filed:
Feb. 02, 2004
Wiley Eugene Hill, Moss Beach, CA (US);
Shibly S. Ahmed, San Jose, CA (US);
Haihong Wang, Milpitas, CA (US);
Bin Yu, Cupertino, CA (US);
Wiley Eugene Hill, Moss Beach, CA (US);
Shibly S. Ahmed, San Jose, CA (US);
Haihong Wang, Milpitas, CA (US);
Bin Yu, Cupertino, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A semiconductor device includes an N-channel device and a P-channel device. The N-channel device includes a first source region, a first drain region, a first fin structure, and a gate. The P-channel device includes a second source region, a second drain region, a second fin structure, and the gate. The second source region, the second drain region, and the second fin structure are separated from the first source region, the first drain region, and the first fin structure by a channel stop layer.