The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2005
Filed:
Aug. 09, 2004
Applicant:
Noriyuki Miura, Kanagawa, JP;
Inventor:
Noriyuki Miura, Kanagawa, JP;
Assignee:
Oki Electric Industry Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L029/76 ;
U.S. Cl.
CPC ...
Abstract
Impurity ions are implanted into the silicon layer of an SOI substrate to achieve an ion concentration distribution which inhibits for a reduction in threshold voltage (Vth-rolloff) as a gate length is reduced. A reduction in potential barrier which runs from a drain region side is effectively inhibited to counter short channel effects resulting from a reduction in gate length attendant with miniaturization of SOI-MOSFETs.