The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2005
Filed:
Feb. 24, 2004
Applicant:
Robert P. Haase, Newport, GB;
Inventor:
Robert P. Haase, Newport, GB;
Assignee:
International Rectifier Corporation, El Segundo, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/336 ;
U.S. Cl.
CPC ...
Abstract
A process for fabricating power semiconductor devices involving preparation of a silicon wafer by epitaxial formation of an intrinsic silicon layer on a silicon substrate and high energy implantation to form channel and drift regions in the intrinsic epitaxial silicon.