The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2005
Filed:
Mar. 17, 2004
Stephen S. K. Hsiung, Jungli, TW;
Jung-chuan Chou, Yunlin Hsien, TW;
Tai-ping Sun, Jungli, TW;
Wen-yaw Chung, Taoyuan, TW;
Yuan-lung Chin, Junghe, TW;
Lei Zhen Ce, Perak, MY;
Stephen S. K. Hsiung, Jungli, TW;
Jung-Chuan Chou, Yunlin Hsien, TW;
Tai-Ping Sun, Jungli, TW;
Wen-Yaw Chung, Taoyuan, TW;
Yuan-Lung Chin, Junghe, TW;
Lei Zhen Ce, Perak, MY;
Chung Yuan Christian University, Chung-Li, TW;
Abstract
A method for fabricating a titanium nitride (TiN) sensing membrane on an extended gate field effect transistor (EGFET). The method comprises the steps of depositing a layer of aluminum on a gate terminal of the EGFET using thermal evaporation and forming the TiN sensing membrane on an exposed part of the layer of aluminum in the sensitive window as an ion sensitive sensor (pH sensor) using a radio frequency (RF) sputtering process. Because TiN is suitable for use in a standard CMOS process, all the elements in the sensing device can be mass produced and offer the benefits of low cost, high yield, and high performance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile