The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2005
Filed:
Sep. 22, 2003
Takahiko Hara, Yokohama, JP;
Masahiro Yoshihara, Yokohama, JP;
Takahiko Hara, Yokohama, JP;
Masahiro Yoshihara, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor integrated circuit is composed of a memory array, sense amplifiers, a first and second drive circuits, and a sense amplifier control circuit. The memory cell array has memory cells arranged in matrix form. The sense amplifiers amplify a signal read from the memory cells. The sense amplifiers include N channel sense amplifiers each composed of an N channel MOS transistor and P channel sense amplifiers each composed of a P channel MOS transistor. The first and second drive circuits each include an N channel MOS transistor that drives the N channel sense amplifiers or the P channel sense amplifiers, respectively. The first and second drive circuits are arranged adjacent to the sense amplifiers. The sense amplifier control circuit supplies a common control signal to both gate electrodes of the N channel MOS transistors included in the first and second drive circuits.