The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2005
Filed:
Dec. 18, 2003
Akira Maruyama, Yokohama, JP;
Akira Maruyama, Yokohama, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
A ferroelectric memory device enabling high-speed access has a voltage selection circuit and a potential gradient correction section. The voltage selection circuit selects a plurality of different voltages generated by a power circuit and outputs them to voltage supply lines, fixing the potential of either the unselected-word-line-voltage-supply-line or the unselected-bit-line-voltage-supply-line. The potential gradient correction section reduces one difference in potential gradient on a side with no fixed potential, which is either the difference between the potential gradient of the selected-word-line-voltage-supply-line and the potential gradient of the unselected-bit-line-voltage-supply-line, or the difference between the potential gradient of the selected bit line voltage supply line and the potential gradient unselected-word-line-voltage-supply-line.