The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2005
Filed:
Dec. 16, 2004
Wen-cheng Yen, Hsinchu, TW;
Chao-chi Lee, Taipei, TW;
Wen-Cheng Yen, Hsinchu, TW;
Chao-Chi Lee, Taipei, TW;
Faraday Technology Corp., Hsin-Chu, TW;
Abstract
A voltage detection circuit. A second NMOS transistor has a gate coupled to the gate of a first NMOS transistor. A comparator has input terminals, and an output terminal. A first resistor is coupled between the first input terminal and the source of the first NMOS transistor, a second resistor is coupled to the comparator and the first resistor, a third resistor is coupled between the second resistor and the comparator, and a fourth resistor is coupled between the second and third resistors, and ground. A first PMOS transistor has a gate coupled to the gates of the first and second NMOS transistors. A second PMOS transistor has a connected gate and drain, a source coupled to the gates of first and second NMOS transistors, a drain coupled to ground, and an n-well directly connected to the gates of the first and second NMOS transistors.