The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2005
Filed:
Jan. 15, 2004
Applicants:
Tsu-jae King, Fremont, CA (US);
David K. Y. Liu, Fremont, CA (US);
Inventors:
Tsu-Jae King, Fremont, CA (US);
David K. Y. Liu, Fremont, CA (US);
Assignee:
Progressant Technologies, Inc., Mountain View, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L029/72 ;
U.S. Cl.
CPC ...
Abstract
A CMOS based n-channel metal-insulator-semiconductor field-effect transistor (MISFET) that exhibits a useful negative differential resistance effect is disclosed. The resulting device can be incorporated into a number of useful applications, including as part of a memory device, a logic device, etc.
Quick Actions:
King, Tsu-Jae. (2005). Cmos process compatible, tunable negative differential resistance (ndr) device and method of operating same (U.S. Patent No. 6972465). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6972465
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