The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2005
Filed:
Feb. 24, 1998
Shigeru Atsumi, Yokohama, JP;
Shigeru Atsumi, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A number of transistors including gate oxide films of different thicknesses and an external terminal are formed on a semiconductor substrate. The transistor connected directly to the external terminal is a transistor other than the transistor having the thinnest gate oxide film. That is, a node which is in contact with an external power supply and thus requires a high breakdown voltage is formed of a thick gate oxide film transistor, while a node which is not in contact with the external power supply is formed of a thin gate oxide film transistor. With this structure, a number of transistors including gate oxide films of different thicknesses can be integrated in a single chip without deterioration of the transistor characteristics. Hence, the degree of freedom with which to design devices/circuits can be remarkably enhanced.