The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2005
Filed:
Dec. 11, 2003
Tadahiro Omi, Sendai-shi, Miyagi, JP;
Naoki Ueda, Nara, JP;
Tadahiro Omi, Sendai-shi, Miyagi, JP;
Naoki Ueda, Nara, JP;
Other;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A non-volatile semiconductor memory device comprising at least: a first electrode containing silicon atoms; and a second electrode formed on the first electrode through an insulating film, wherein the insulating film is formed of at least two layers of: a lower silicon nitride film on the first electrode side obtained by nitriding the first electrode; and an upper silicon nitride film formed on the lower silicon nitride film according to a chemical vapor deposition method, and at least a part of the lower silicon nitride film contains a rare gas element at an area density of 10cmor more.