The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2005
Filed:
Jun. 28, 2002
Krishnaswamy Ramkumar, San Jose, CA (US);
Manuj Rathor, Santa Clara, CA (US);
Biju Parameshwaran, Union City, CA (US);
Loren Lancaster, Colorado Springs, CO (US);
Krishnaswamy Ramkumar, San Jose, CA (US);
Manuj Rathor, Santa Clara, CA (US);
Biju Parameshwaran, Union City, CA (US);
Loren Lancaster, Colorado Springs, CO (US);
Other;
Abstract
A method of forming oxide-nitride-oxide (ONO) dielectric of a SONOS-type nonvolatile storage device is disclosed. According to a first embodiment, a method may include the steps of forming a tunneling dielectric (step), forming a charge storing dielectric (step), and forming a top insulating layer (step) all in the same wafer processing tool. According to various aspects of the embodiments, all layers of an ONO dielectric of a SONOS-type device may be formed in the same general temperature range. Further, a tunneling dielectric may include a tunnel oxide formed with a long, low pressure oxidation, and a top insulating layer may include silicon dioxide formed with a preheated source gas.