The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2005
Filed:
Dec. 05, 2003
Yang Du, Austin, TX (US);
Leo Mathew, Austin, TX (US);
Yang Du, Austin, TX (US);
Leo Mathew, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A double gate semiconductor device () is used beneficially as a multiplier (). The double gate semiconductor device () has a lateral fin () as the channel region with the gates formed opposite each other on both sides of the fin. The lateral positioning of the fin provides symmetry between the two gates. To increase drive current, multiple transistors are easily connected in parallel by having a continuous fin structure () with alternating source/drain terminals () in which the sources are connected together and the drains are connected together. Gates () are positioned between each pair of adjacent source/drain terminals and electrically connected together. The multiplier () may also be used as a mixer and further as a phase detector.