The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2005

Filed:

Nov. 28, 2000
Applicants:

Tuan Duc Pham, San Jose, CA (US);

Mark T. Ramsbey, Sunnyvale, CA (US);

Jeffrey A. Shields, Sunnyvale, CA (US);

Angela T. Hui, Fremont, CA (US);

Dawn Hopper, San Jose, CA (US);

Inventors:

Tuan Duc Pham, San Jose, CA (US);

Mark T. Ramsbey, Sunnyvale, CA (US);

Jeffrey A. Shields, Sunnyvale, CA (US);

Angela T. Hui, Fremont, CA (US);

Dawn Hopper, San Jose, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/336 ;
U.S. Cl.
CPC ...
Abstract

A method of preventing UV charging of flash NVROM cells during fabrication and a device thereby formed. During device fabrication, a UV blocking layer is deposited over the floating gates. The UV blocking layer substantially blocks UV from entering the gate regions so as to prevent electron mobility sufficient to render the cells unprogrammable or unerasable. The reduced electron migration during processing of the NVROM leads to increased yield and reliability of the devices.


Find Patent Forward Citations

Loading…