The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2005
Filed:
Mar. 02, 2001
Gunther Wehrhan, Jena, DE;
Peter Elzner, Lorch, DE;
Ewald Moersen, Mainz, DE;
Richard Schatter, Eppsteinl Sreluthal, DE;
Hans-joerg Axmann, Jena, DE;
Thorsten Reichardt, Stadtroda, DE;
Gunther Wehrhan, Jena, DE;
Peter Elzner, Lorch, DE;
Ewald Moersen, Mainz, DE;
Richard Schatter, Eppsteinl Sreluthal, DE;
Hans-Joerg Axmann, Jena, DE;
Thorsten Reichardt, Stadtroda, DE;
Schott Glas, Mainz, DE;
Abstract
In the method for growing large-volume monocrystals crystal raw material is heated in a melting vessel with heating elements to a temperature above its melting point until a melt is formed. A monocrystal is then formed on the bottom of the melting vessel by lowering the temperature at least to the crystallization point. A solid/liquid phase boundary is formed between the monocrystal and the melt. The monocrystal grows towards the melt surface in a direction that is perpendicular to the phase boundary. A vertical axial temperature gradient is produced and maintained between the bottom of the melting vessel and its upper opening and heat inflow and/or heat outflow through side walls of the melting vessel is prevented, so that the solid/liquid phase boundary has a curvature radius of at least one meter. A crystal-growing device for performing this process is also described.