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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6969448 B1

PDFFull Text
Date of Patent:
Nov. 29, 2005

Filed:

Dec. 30, 1999

Method for forming a metallization structure in an integrated circuit

Applicant:

Gorley L. Lau, Fremont, CA (US);

Inventor:

Gorley L. Lau, Fremont, CA (US);

Assignee:

Cypress Semiconductor Corp., San Jose, CA (US);

Attorneys:

Kevin L. Daffer

Mollie E. Lettang

Daffer McDaniel, LLP

Primary Examiner:

Gregg Cantelmo

Int. Cl.
CPC ...
C23C014/34 ; H01L021/44 ;
U.S. Cl.
CPC ...
Abstract

A method for fabricating a metallization structure is presented. The method preferably includes ion metal plasma depositing a wetting layer within a cavity defined in a dielectric layer. The wetting layer preferably includes titanium. The method preferably further includes sputter depositing a bulk metal layer within the cavity and upon the wetting layer. Sputter depositing of the bulk metal layer is preferably performed in a single deposition chamber at least until the cavity is substantially filled.

Find Patent Forward Citations

Lau, Gorley. (2005). Method for forming a metallization structure in an integrated circuit (U.S. Patent No. 6969448). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6969448

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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