The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2005

Filed:

Dec. 30, 1999
Applicant:

Gorley L. Lau, Fremont, CA (US);

Inventor:

Gorley L. Lau, Fremont, CA (US);

Assignee:

Cypress Semiconductor Corp., San Jose, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C014/34 ; H01L021/44 ;
U.S. Cl.
CPC ...
Abstract

A method for fabricating a metallization structure is presented. The method preferably includes ion metal plasma depositing a wetting layer within a cavity defined in a dielectric layer. The wetting layer preferably includes titanium. The method preferably further includes sputter depositing a bulk metal layer within the cavity and upon the wetting layer. Sputter depositing of the bulk metal layer is preferably performed in a single deposition chamber at least until the cavity is substantially filled.


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