The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2005
Filed:
Jan. 12, 2004
Daryl J. Pocker, San Jose, CA (US);
Jan-ulrich Thiele, Menlo Park, CA (US);
Bond-yen Ting, San Jose, CA (US);
Richard Longstreth White, Los Altos, CA (US);
Bing K. Yen, San Jose, CA (US);
Daryl J. Pocker, San Jose, CA (US);
Jan-Ulrich Thiele, Menlo Park, CA (US);
Bond-Yen Ting, San Jose, CA (US);
Richard Longstreth White, Los Altos, CA (US);
Bing K. Yen, San Jose, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for sputtering a thin film protective layer with improved durability is disclosed. The method reduces kinetic energy of the ions of the overcoat material during the initial period of deposition to form a buffering interface which reduces the interpenetration of the atoms of the protective layer into the underlying film. In the method of the invention the sputtering of the overcoat preferably begins with zero (or very low) voltage applied to the underlying film resulting in minimal ion implantation in the underlying film. The 'high energy' phase of the process begins with increases in the magnitude of the negative bias voltage applied to the underlying film. The higher energy imparted to ions in the plasma result in a denser and harder film being formed over the initial buffer layer. The protective layer preferably comprises carbon and nitrogen.