The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2005
Filed:
Dec. 18, 2001
Applicants:
Khandker N. Quader, Sunnyvale, CA (US);
Khanh T. Nguyen, Sunnyvale, CA (US);
Feng Pan, San Jose, CA (US);
Long C. Pham, San Jose, CA (US);
Alexander K. Mak, Los Altos Hills, CA (US);
Inventors:
Khandker N. Quader, Sunnyvale, CA (US);
Khanh T. Nguyen, Sunnyvale, CA (US);
Feng Pan, San Jose, CA (US);
Long C. Pham, San Jose, CA (US);
Alexander K. Mak, Los Altos Hills, CA (US);
Assignee:
SanDisk Corporation, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C016/04 ;
U.S. Cl.
CPC ...
Abstract
A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.