The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2005
Filed:
Mar. 16, 2004
Applicants:
Akio Hirata, Kyoto, JP;
Toshiyuki Moriwaki, Osaka, JP;
Tetsurou Toubou, Hyogo, JP;
Nana Okamoto, Osaka, JP;
Mitsuaki Hayashi, Kyoto, JP;
Inventors:
Akio Hirata, Kyoto, JP;
Toshiyuki Moriwaki, Osaka, JP;
Tetsurou Toubou, Hyogo, JP;
Nana Okamoto, Osaka, JP;
Mitsuaki Hayashi, Kyoto, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C011/34 ;
U.S. Cl.
CPC ...
Abstract
A dummy MOSFET including a dummy gate separates nMOSFETs included in adjacent memory cells arranged in the direction in which bit lines extend. This configuration reduces a stress applied from an STI to the channel regions of the nMOSFETs. Accordingly, decrease of drive currents of the nMOSFETs is suppressed.